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Ordering number : ENN7424
MCH5815
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
MCH5815
DC / DC Converter Applications
Features
*
Package Dimensions
*
0.25
0.65 2.0
(Bottom view)
0.07
*
Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3317) and a Schottky Barrier Diode (SBS007M) 2195 contained in one package facilitating high-density mounting. [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive. [SBD] 1) Short reverse recovery time. 2) Low forward voltage.
2.1
[MCH5815]
0.3 4 5 0.15
1.6
0.25
3
2
1
5
4
0.85
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain SANYO : MCPH5
1
2
3
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 0.5 3 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit -12 10 --1.5 --6.0 0.8 --150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : QR
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32603 TS IM TA3841 No.7424-1/5
MCH5815
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz cycle IF=IR=100mA, see specified Test Circuit. 15 0.35 0.4 20 10 0.41 0.46 200 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--12V, VGS=0 VGS=8.0V, VDS=0 VDS=--6V, ID=--1mA VDS=--6V, ID=--0.8A ID=--0.8A, VGS=-4.5V ID=--0.4A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-1.5A VDS=--6V, VGS=--4.5V, ID=-1.5A VDS=--6V, VGS=--4.5V, ID=-1.5A IS=--1.5A, VGS=0 --12 --10 10 --0.3 1.3 1.8 220 320 430 160 45 35 11 45 29 30 2.6 0.25 0.65 --0.92 --1.5 290 450 650 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Electrical Connection (Top view)
5 4
1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain
1 2 3
Switching Time Test Circuit
[MOSFET]
VIN 0V --4.5V VIN ID= --0.8A RL=7.5 VDD= --6V
trr Test Circuit
[SBD]
Duty10%
100mA 10mA
50 10s --5V
100
10
100mA
D
PW=10s D.C.1%
VOUT
G
trr
MCH5815(MOSFET) P.G 50
S
No.7424-2/5
MCH5815
Ta= --25 C
--1.5
ID -- VDS
--4 .5 V
[MOSFET]
--2.0
ID -- VGS
C 25
[MOSFET]
--3
VV .5 -3.0 2.5V -Drain Current, ID -- A
--1.5
--1.2
Drain Current, ID -- A
--0.9
--1.8
V
--1.5V
--0.6
--1.0
--0.5
--0.3
VGS= --1.0V
0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 0 --0.5
--1.0
Ta= 75 C 25 --2 5C C
--1.5
--2.0
75 C
VDS= --6V
--2.5
--3.0
800
Drain-to-Source Voltage, VDS -- V IT04353 RDS(on) -- VGS [MOSFET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m
800 700 600 500 400 300 200 100 0 --60
Gate-to-Source Voltage, VGS -- V IT04354 RDS(on) -- Ta [MOSFET]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600
--0.8A
500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8
ID= --0.4A
8V = --1. VGS .1A, 0 V I D= -= --2.5 , V GS --0.4A I D= --4.5V , V GS= = --0.8A ID
--40
--20
0
20
40
60
80
100
120
140
160
5
Gate-to-Source Voltage, VGS -- V IT04355 yfs -- ID [MOSFET] VDS= --6V
Ambient Temperature, Ta -- C
5 3
IT04356
IF -- VSD
[MOSFET] VGS=0
Forward Transfer Admittance, yfs -- S
3
C 25
1.0 7 5 3 2
C -25 =C Ta 75
Forward Current, IF -- A
2
2
--1.0 7 5
Ta=7 5C
--0.6
25C
3 2
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
--0.1 --0.4
--0.8
--25C
--1.0
--1.2
--1.4
Drain Current, ID -- A
3 2
IT04357
SW Time -- ID
[MOSFET]
5 3 2
Diode Forward Voltage, VSD -- V IT04358 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz
VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
100 7 5 3 2
Ciss
tr
td(off)
tf
100 7 5 3 2
td(on)
10 7 5 3 2 --0.1
Coss
Crss
10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 IT04360
Drain Current, ID -- A
IT04359
Drain-to-Source Voltage, VDS -- V
No.7424-3/5
MCH5815
--4.5 --4.0
VGS -- Qg
VDS= --6V ID= --1.5A
[MOSFET]
--10 7 5 3 2
ASO
IDP= --6.0A
10
[MOSFET] <10s
Gate-to-Source Voltage, VGS -- V
1m
ID= --1.5A
ms
s
--3.5
Drain Current, ID -- A
--3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT04361
--1.0 7 5 3 2 --0.1 7 5 3 2
DC
Operation in this area is limited by RDS(on).
10
0m
op
s
era
tio
n
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit
2 3 5 7 --1.0 2 3 5
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
7 --10 2 IT05340
[MOSFET]
Allowable Power Dissipation, PD -- W
0.8
M
ou
nt
ed
on
0.6
ac
er
am
ic
bo
0.4
ar
d(
90
0m
m2 !0
0.2
.8m
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
2 1.0
IT05341
IF -- VF
[SBD]
100 7 5 3 2
IR -- VR
Ta=125C
[SBD]
Forward Current, IF -- A
5 3
C 100
Reverse Current, IR -- mA
7
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
100C
Ta =1 2
5
2 0.1 7 5
C 75
75C
C
50C
25C
2 0.01 0 0.1 0.2
25
3
C
50 C
0.01 7 5 3 2 0.001 0 5 10 15 IT02913
0.3
0.4
0.5 IT02912
Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W
0.4 0.35 0.3 0.25 0.2
Reverse Voltage, VR -- V
100 7
PF(AV) -- IO
[SBD]
C -- VR
[SBD] f=1MHz
Interterminal Capacitance, C -- pF
(1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 (1) (2) (4) (3)
5 3 2
10 7 5 3 2
Rectangular wave
0.15 0.1 0.05 0 0 0.1 0.2 0.3 0.4 180 360 0.5
Sine wave
360
0.6
0.7 IT02914
1.0 1.0
2
3
5
7
10
2
3
Average Forward Current, IO -- A
Reverse Voltage, VR -- V
IT02915
No.7424-4/5
MCH5815
3.5
IS -- t
IS 20ms t
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
3.0
2.5
2.0
1.5
1.0
0.5 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Time, t -- s
ID00338
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2003. Specifications and information herein are subject to change without notice.
PS No.7424-5/5

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